BSDD10G65E2
BSDD10G65E2 is a Bourns Inc. electronic component in Types of Rectifier Diodes. Specifications: DIODE SIL CARBIDE 650V 10A TO252. Purchasing and R&D teams can check this part numbe
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Hong Kong STY Technology Co., Limited supplies integrated circuits (ICs), resistors, capacitors, inductors and diodes from stock. Open a part number to see the brand and specifications, then request a quote for quantity and lead time. Genuine stock is confirmed when you inquire.
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Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Current - Average Rectified (Io) | 10A |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 (DPAK) |
| Technology | SiC (Silicon Carbide) Schottky |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr, F | 323pF @ 1V, 1MHz |