IPB175N20NM6ATMA1
IPB175N20NM6ATMA1 is a Infineon Technologies electronic component in Single FETs, MOSFETs. Specifications: IPB175N20NM6ATMA1. Purchasing and R&D teams can check this part number an
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Hong Kong STY Technology Co., Limited supplies integrated circuits (ICs), resistors, capacitors, inductors and diodes from stock. Open a part number to see the brand and specifications, then request a quote for quantity and lead time. Genuine stock is confirmed when you inquire.
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Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Drain to Source Voltage (Vdss) | 200 V |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 15V |
| Vgs(th) (Max) @ Id | 4.5V @ 105µA |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 100 V |
| Supplier Device Package | PG-TO263-3-U01 |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta), 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 38A, 15V |
| Power Dissipation (Max) | 3.8W (Ta), 203W (Tc) |